sot-23 plastic-encapsulate transistors a1015 transistor (pnp) features complementary to c1815 marking:ba maximum ratings (ta=25 unless otherwise noted) symbol ? parameter ? value ?? units vcbo collector-base voltage - ? -60 v vceo collector-emitter voltage - ? -50 v vebo emitter-base voltage - ? -5 v ic collector current -continuous -0.15 a pc collector power dissipation ?? 0.2 w tj junction temperature 150 tstg storage temperature ?? -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter ? symbol ? test conditions min ? typ ? max ? unit collector-base breakdown voltage - ? v(br)cbo ic= -100 a, ie=0 -60 v collector-emitter breakdown voltage - ? v(br)ceo ic= -1ma, ib=0 -50 v emitter-base breakdown voltage - ? v(br)ebo ie=-100 a, ic=0 -5 v collector cut-off current - ? icbo vcb=-50 v , ie=0 -1 a collector cut-off current - ? iceo vce=-35v , ib=0 -10 a emitter cut-off current - ? iebo veb=-5v , ic=0 -1 a dc current gain ? hfe vce=-6v, ic= -2ma 80 600 collector-emitter sa turation voltage - ? vce(sat) ic=-100ma, ib= -5ma -0.3 v base-emitter satura tion voltage - ? vbe(sat) ic=-100ma, ib= -5ma -1 v classification of hfe range 80-200 200-400 400-600 product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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